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IPB80N06S2-07 Dataheets PDF



Part Number IPB80N06S2-07
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPB80N06S2-07 DatasheetIPB80N06S2-07 Datasheet (PDF)

IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 6.3 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2-07 IPP80N06S2-07 IPI80N06S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP00.

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IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 6.3 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2-07 IPP80N06S2-07 IPI80N06S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-18818 SP0002-18810 SP0002-18817 Marking 2N0607 2N0607 2N0607 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 80 80 320 530 ±20 250 -55 ... +175 55/175/56 mJ V W °C Unit A IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=180 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=68 A, V GS=10 V, I D=68 A, SMD version 55 2.1 3.0 0.01 4.0 1 µA V 0.6 62 62 40 K/W Values typ. max. Unit - 1 1 5.6 5.3 100 100 6.6 6.3 nA mΩ IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs 0.9 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=44 V, I D=80 A, V GS=0 to 10 V 18 35 86 4.9 24 53 110 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=80 A, R G=3.3 Ω V GS=0 V, V DS=25 V, f =1 MHz 3400 880 215 16 37 61 36 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 55 70 ns Reverse recovery charge2) 1) Q rr - 96 120 nC Current is limited by bondwire; with an R thJC = 0.6 K/W the chip is able to carry 135 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. S.


BC857QAS IPB80N06S2-07 IPP80N06S2-07


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