VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Low profile, axial leaded outline • Very low forward voltage drop
Cathode Anode
• High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC
C-16
PRODUCT SUMMARY
Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-201AD (C-16) 3A 50 V, 60 V 0.64 V 15 mA at 125 °C 150 °C Single die 5.0 mJ
• Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only)
DESCRIPTION
The VS-MBR350..., VS-MBR350 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 3 Apk, TJ = 25 °C CHARACTERISTICS Rectangular waveform VALUES 3.0 50/60 460 0.73 - 40 to 150 UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 50 50 60 60 V VS-MBR350 VS-MBR350-M3 VS-MBR360 VS-MBR360-M3 UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current See fig. 4 Maximum peak one cycle non-repetitive surge current See fig. 6 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TL = 50 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 1 A, L = 10 mH Current decaying linearly to zero in 1 μs Frequency limited by, TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 3.0 460 80 5.0 1.0 mJ A A UNITS
Revision: 13-Oct-11
Document Number: 93450 1 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL 1.0 A 3.0 A Maximum forward voltage drop See fig. 1 VFM (1) 9.4 A 1.0 A 3.0 A 9.4 A TJ = 25 °C Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM
(1)
TEST CONDITIONS
VALUES 0.58
UNITS
TJ = 25 °C
0.73 1.06 0.49 V
TJ = 125 °C
0.64 0.89 0.6
TJ = 100 °C TJ = 125 °C
VR = Rated VR
8 15 190 9.0 10 000
mA
CT LS dV/dt
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR
pF nH V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to lead Approximate weight SYMBOL TJ (1), TStg RthJL (2) DC operation See fig. 4 TEST CONDITIONS VALUES - 40 to 150 30 1.2 0.042 Case style C-16 MBR350 MBR360 UNITS °C °C/W g oz.
Marking device Notes
(1) (2)
dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
Revision: 13-Oct-11
Document Number: 93450 2 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3
www.vishay.com
Vishay Semiconductors
Allowable Lead Temperature (°C)
160 140 120 100 80 60 40 20 0 0
93450_04
IF - Instantaneous Forward Current (A)
100
DC
10
1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Square wave (D = 0.50) 80% Rated VR applied see note (1) 1 2 3 4 5
93450_01
VFM - Forward Voltage Drop (V)
IF(AV) - Average Forward Current (A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Allowable Lead Temperature vs. Average Forward Current
3
100
IR - Reverse Current (mA)
10
Average Power Loss (W)
TJ = 150 °C
2.5 2 RMS Limit 1.5 1 0.5 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC DC
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001 0
93450_02
20
40
60
93450_05
0
0.5 1
1.5
2
2.5
3
3.5
4
4.5
5
VR - Reverse Voltage (V)
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
IFSM - Non-Repetitive Surge Current (A)
1000
1000
CT - Junction Capacitance (pF)
T = 25 °C
J
100
100 At Any Rated Load Condition And .