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VS-MBR350 Dataheets PDF



Part Number VS-MBR350
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-MBR350 DatasheetVS-MBR350 Datasheet (PDF)

VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC C-16 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM ma.

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VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC C-16 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-201AD (C-16) 3A 50 V, 60 V 0.64 V 15 mA at 125 °C 150 °C Single die 5.0 mJ • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-MBR350..., VS-MBR350 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 3 Apk, TJ = 25 °C CHARACTERISTICS Rectangular waveform VALUES 3.0 50/60 460 0.73 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 50 50 60 60 V VS-MBR350 VS-MBR350-M3 VS-MBR360 VS-MBR360-M3 UNITS ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 4 Maximum peak one cycle non-repetitive surge current See fig. 6 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TL = 50 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 1 A, L = 10 mH Current decaying linearly to zero in 1 μs Frequency limited by, TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 3.0 460 80 5.0 1.0 mJ A A UNITS Revision: 13-Oct-11 Document Number: 93450 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 1.0 A 3.0 A Maximum forward voltage drop See fig. 1 VFM (1) 9.4 A 1.0 A 3.0 A 9.4 A TJ = 25 °C Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) TEST CONDITIONS VALUES 0.58 UNITS TJ = 25 °C 0.73 1.06 0.49 V TJ = 125 °C 0.64 0.89 0.6 TJ = 100 °C TJ = 125 °C VR = Rated VR 8 15 190 9.0 10 000 mA CT LS dV/dt VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to lead Approximate weight SYMBOL TJ (1), TStg RthJL (2) DC operation See fig. 4 TEST CONDITIONS VALUES - 40 to 150 30 1.2 0.042 Case style C-16 MBR350 MBR360 UNITS °C °C/W g oz. Marking device Notes (1) (2) dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB, thermal probe connected to lead 2 mm from package Revision: 13-Oct-11 Document Number: 93450 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Allowable Lead Temperature (°C) 160 140 120 100 80 60 40 20 0 0 93450_04 IF - Instantaneous Forward Current (A) 100 DC 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Square wave (D = 0.50) 80% Rated VR applied see note (1) 1 2 3 4 5 93450_01 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Allowable Lead Temperature vs. Average Forward Current 3 100 IR - Reverse Current (mA) 10 Average Power Loss (W) TJ = 150 °C 2.5 2 RMS Limit 1.5 1 0.5 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC DC 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0 93450_02 20 40 60 93450_05 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VR - Reverse Voltage (V) Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage IFSM - Non-Repetitive Surge Current (A) 1000 1000 CT - Junction Capacitance (pF) T = 25 °C J 100 100 At Any Rated Load Condition And .


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