MTA17A02CDN6

CYStech Electronics Corp. Dual N-Channel Enhancement Mode MOSFET Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 1/8 MTA17A02CDN6 BVDSS ID Features Simple drive requirement Low on-resistance Small package outline Pb-free lead plating and halogen-free package RDSON (TYP.) VGS=4.5V VGS=4.5V, ID=6A VGS=4.0V, ID=6A VGS=3.0V, ID=6A VGS=2.5V, ID=6A 20V 6A 16.1mΩ 16.7mΩ 18.4 mΩ 20.2 mΩ Equivalent Circuit MTA17A02CDN6 G：Gate S：Source D：Drain Ordering Information Device MTA17A02CDN6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTA17A02CDN6 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=4.5V Pulsed Drain Current (Note 2, 3) Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 2/8 Symbol VDS VGS TA=25 °C TA=70 °C (Note 1) (Note 1) ID IDM PD Tj, Tstg TA=25 °C TA=70 °C Operating Junction Temperature and Storage Temperature Range Total Power Dissipation (Note 1) Limits 20 ±10 6 4.8 24 1.25 0.8 -55~+150 Unit V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-ambient, max Symbol Value Unit (Note 1) RθJA 100 °C/W Note : 1.Surfa...