MTA65N15H8

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C739H8 Issued Date : 2014.02.11 Revised Date : Page No. : 1/10 MTA65N15H8 Description BVDSS ID @VGS=10V VGS=10V, ID=15A RDSON(TYP) VGS=5V, ID=10A VGS=3V, ID=3A 150V 20A 60mΩ 59mΩ 60mΩ The MTA65N15H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and Halogen-free package Symbol MTA65N15H8 Outline DFN5×6 Pin 1 G：Gate D：Drain S：Source MTA65N15H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Spec. No. : C739H8 Issued Date : 2014.02.11 Revised Date : Page No. : 2/10 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A, VDD=50V Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS (Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) ID IDSM IDM I...