N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C948E3 Issued Date : 2014.03.05 Revised Date : 2017.04.05 Page No. : 1/8
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C948E3 Issued Date : 2014.03.05 Revised Date : 2017.04.05 Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB1D7N03E3 BVDSS ID @VGS=10V
RDSON(TYP) @ VGS=10V, ID=30A
RDSON(TYP) @ VGS=4.5V, ID=20A
30V 203A 2mΩ 2.6mΩ
Features
Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS compliant package
Symbol
MTB1D7N03E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device
Package
Shipping
MTB1D7N03E3-0-UB-S
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V (silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V (silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(package limit)
(Note 1)
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ TA=25°C, VGS=10V (Note 2)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 2)
Avalanche Current
(Note 3)
Avalanche Energy @ L=100μH, ID=80A, RG=25Ω (Note 2)
Power Dissipation
TC=25°C TC=100°C
(Note 1) (Note 1)
Power Dissipation
TA=25°C TA=70°C
(Note 2...
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