PXT8550

Product specification SOT-89-3L Plastic-Encapsulate Transistors PXT8550 FEATURES Compliment to PXT8050 MARKING: Y2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -25 -5 -1.5 0.5 150 -55~150 Unit V V V A W ℃ TRANSISTOR (PNP) SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage Transition frequency output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE(on) VBEF fT Cob Test conditions IC= -100μA, IE=0 Min -40 -25 -5 -0.1 -0.1 -0.1 85 40 -0.5 -1.2 -1 -1.55 100 20 V V V V MHz pF 400 Max Unit V V V μA μA μA IC= -0.1mA, IB=0 IE= -100μA, IC=0 VCB= -40 V,IE=0 VCE= -20V, IB=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA IC=-800mA, IB= -80mA IC=-800mA, IB= -80mA Ic=-1V,VCE=-10mA IB=-1A VCE= -10V, IC= -50mA VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF hFE(1) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 http://www.twtys...