FDU7N60NZTU

FDD7N60NZ / FDU7N60NZTU — N-Channel UniFETTM II MOSFET November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A Low Gate Charge (Typ. 13 nC) Low Crss (Typ. 7 pF) 100% Avalanche Tested Improved dv/dt Capability ESD Improved Capability RoHS Compliant Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Lighting Uninterruptible Power Supply D D G S D-PAK I-PAK G D S G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate Above 25oC (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) - Continuous (TC = 25oC) Parameter FDD7N60NZTM/ FDU7...