IRF820

S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. November 1997 Features 2.2A and 2.5A, 450V and 500V rDS(ON) = 3.0Ω and 4.0Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF820 IRF821 IRF822 IRF823 S G NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1581.2 5-1 I...