Document
SCS70DSTN
Elektronische Bauelemente 0.07 A, 70 V Silicon Epitaxial Planar Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring for stress protection
L C
WBFBP-02C
FEATURES
● ● ● ●
Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage
M B A E F
D J
H
M
G
K
APPLICATION
● ● ●
REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M
Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF.
Ultra high-speed switching Voltage clamping Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards
MARKING
S5
PACKAGE INFORMATION
Package WBFBP-02C MPQ 10K Leader Size 7 inch
MAXIMUM RATINGS CHARACTERISTICS(TA=25°C unless otherwise specified)
Parameter
DC reverse voltage Forward continuous current Peak forward surge current @ Tp< 10ms Power Dissipation Thermal resistance junction to ambient Junction, Storage Temperature Range
Symbol
VR IF IFSM Pd RθJA TJ, TSTG
Limits
70 70 100 250 400 125, -55 ~ 150
Unit
V mA mA mW ℃/W ℃
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameters
Forward Voltage
Symbol
VF
Min.
-
Typ.
2
Max.
0.41 0.75 1 100 500 -
Unit
V
Test Conditions
IF=1mA IF=10mA IF=15mA VR=50V VR=70V VR = 0V, f=1.0MHz
Reverse Current1 Diode capacitance
IR Cd
nA pF
Note: 1. Pulse Test: Pulse width=300μs;Duty cycle=0.02.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
22-Nov-2013 Rev. B
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