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SCS70DSTN Dataheets PDF



Part Number SCS70DSTN
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description 0.07A 70V Silicon Epitaxial Planar Schottky Barrier Rectifiers
Datasheet SCS70DSTN DatasheetSCS70DSTN Datasheet (PDF)

SCS70DSTN Elektronische Bauelemente 0.07 A, 70 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection L C WBFBP-02C FEATURES ● ● ● ● Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F D J H M G K APPLICATION ● ● ●  REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 .

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SCS70DSTN Elektronische Bauelemente 0.07 A, 70 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection L C WBFBP-02C FEATURES ● ● ● ● Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F D J H M G K APPLICATION ● ● ●  REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M  Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF. Ultra high-speed switching Voltage clamping Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards MARKING S5 PACKAGE INFORMATION Package WBFBP-02C MPQ 10K Leader Size 7 inch MAXIMUM RATINGS CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter DC reverse voltage Forward continuous current Peak forward surge current @ Tp< 10ms Power Dissipation Thermal resistance junction to ambient Junction, Storage Temperature Range Symbol VR IF IFSM Pd RθJA TJ, TSTG Limits 70 70 100 250 400 125, -55 ~ 150 Unit V mA mA mW ℃/W ℃ ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Forward Voltage Symbol VF Min. - Typ. 2 Max. 0.41 0.75 1 100 500 - Unit V Test Conditions IF=1mA IF=10mA IF=15mA VR=50V VR=70V VR = 0V, f=1.0MHz Reverse Current1 Diode capacitance IR Cd nA pF Note: 1. Pulse Test: Pulse width=300μs;Duty cycle=0.02. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Nov-2013 Rev. B Page 1 of 1 .


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