IRF3610SPBF

IRF3610SPbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G S VDSS RDS(on) typ. max. ID 100V 9.3mΩ 11.6mΩ 103A D S G D2Pak IRF3610SPbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 103 73 410 333 2.2 ± 20 23 -55 to + 175 300 (1.6mm from case) Units A W W/°C V V/ns °C d f Avalanche Characteristics EAS IAR EAR Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Ù d Thermal Resistance Symbol RθJC RθJA ™ 460 See Fig. 14, 15, 22a, 22b mJ A mJ Junction-to-Case Junction-to-Ambient (PCB Mount) jk Parameter Typ. Max. 0.50 40 Units °C/W i ––– ––– 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 IRF3610SPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) V...