HEXFET Power MOSFET
PD - 97522A
IRF9393PbF
HEXFET® Power MOSFET
VDS VGS max RDS(on) max
(@VGS = -10V)
-30 ±25 19.4 -9.2
V V mΩ A
S S S ...
Description
PD - 97522A
IRF9393PbF
HEXFET® Power MOSFET
VDS VGS max RDS(on) max
(@VGS = -10V)
-30 ±25 19.4 -9.2
V V mΩ A
S S S G
1 2 3 4
8 7 6 5
D D D D
ID
(@TA = 25°C)
SO-8
Applications Adaptor Input Switch for Notebook PC
Features and Benefits
Features Resulting Benefits
25V VGS max Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen
Direct Drive at High V G S Multi-Vendor Compatibility Environmentally Friendlier
Orderable part number IRF9393PbF IRF9393TRPbF
Package Type SO8 SO8
Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
-30 ± 25 -9.2 -7.3 -75 2.5 1.6 0.02 -55 to + 150
Units
V
f Power Dissipation f
Power Dissipation
c
A
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
Notes through are on page 2
www.irf.com
1
11/3/10
IRF9393PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
-30 ––– ––– ––– ––– -1.3 ––– ––– ––– ––– ––– 13 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.019 13.3 15.6 25.6 -1.8 -5.7 ––– ––– ––– ––– ––– 14 25 3.5 6.4 15 16 44...
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