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NE23300 Datasheet, Equivalent, HJ FET.

SUPER LOW NOISE HJ FET

SUPER LOW NOISE HJ FET

 

 

 

Part NE23300
Description SUPER LOW NOISE HJ FET
Feature SUPER LOW NOISE HJ FET (SPACE QUALIFIED) FEATURES
• VERY LOW NOISE FIGURE: 0.
75 dB typical at 12 GHz Optimum Noise F igure, NFOPT (dB) NE23300 NOISE FIGUR E & ASSOCIATED GAIN vs.
FREQUENCY VDS = 2 V, IDS = 10 mA 4.
5 4.
0 3.
5 3.
0 NF 2.
5 2.
0 1.
5 1.
0 0.
5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18
• HIGH ASSOCIATED G AIN: 10.
5 dB Typical at 12 GHz
• GATE LENGTH: 0.
3 µm
• GATE WIDTH: 280 µ m DESCRIPTION The NE23300 is a Hetero- Junction FET chip that utilizes the jun ction between Si-doped AlGaAs and undop ed InGaAs to create a two-dimensional e lectron gas layer with very high electr on mobility.
Its excelle .
Manufacture California Eastern
Datasheet
Download NE23300 Datasheet
Part NE23300
Description SUPER LOW NOISE HJ FET
Feature SUPER LOW NOISE HJ FET (SPACE QUALIFIED) FEATURES
• VERY LOW NOISE FIGURE: 0.
75 dB typical at 12 GHz Optimum Noise F igure, NFOPT (dB) NE23300 NOISE FIGUR E & ASSOCIATED GAIN vs.
FREQUENCY VDS = 2 V, IDS = 10 mA 4.
5 4.
0 3.
5 3.
0 NF 2.
5 2.
0 1.
5 1.
0 0.
5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18
• HIGH ASSOCIATED G AIN: 10.
5 dB Typical at 12 GHz
• GATE LENGTH: 0.
3 µm
• GATE WIDTH: 280 µ m DESCRIPTION The NE23300 is a Hetero- Junction FET chip that utilizes the jun ction between Si-doped AlGaAs and undop ed InGaAs to create a two-dimensional e lectron gas layer with very high electr on mobility.
Its excelle .
Manufacture California Eastern
Datasheet
Download NE23300 Datasheet

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