NE23383B

SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B (SPACE QUALIFIED) FEATURES SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz GATE LENGTH = LG = 0.3 µm GATE WIDTH = WG = 280 µm HERMETIC SEALED CERAMIC PACKAGE HIGH RELIABILITY 1.88 ± 0.3 2 4 0.5 ± 0.1 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 83B 1.88 ± 0.3 1 4.0 MIN (ALL LEADS) 3 DESCRIPTION The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also results in low noise figure and high associated gain. The device is housed in a rugged hermetically sealed metal ceramic stripline package selected for industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 1.0 ± 0.1 1.45 MAX +0.07 0.1 -0.03 APPLICATION BEST SUITED FOR LOW NOISE AMPS STAGE AT C AND X BAND ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF GA IDSS VGS(off) gM IGDO IGSO PARAMETERS AND CONDITIONS Noise Figure at VDS = 2 V, ID = 10 mA, f = 4 GHz Associated Gain at VDS = 2 V, ID = 10 mA, f = 4 GHz Saturated Drain Current at VDS = 2 V, VGS = 0 V Gate to Source Cut off Voltage at VDS = 2 V, ID = 100 µA Transconductance at VDS = 2 V, ID = 10 mA Gate to Drain Leakage Current at VGD = -3 V Gate...