NE24283B

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz GATE LENGTH: 0.25 µm GATE WIDTH: 200 µm HERMETIC METAL/CERAMIC PACKAGE Optimum Noise Figure, NFOPT (dB) 1.4 1.2 GA 1 0.8 0.6 0.4 0.2 NF 18 15 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 21 12 9 6 3 DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 0 1 10 20 30 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Saturated Drain Current at VDS = 2 V, VGS = 0 V Pinch-off Voltage a...