N-Channel MOSFET
SMG2392N
Elektronische Bauelemente 0.6A, 150V, RDS(ON) 2.6Ω N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A ...
Description
SMG2392N
Elektronische Bauelemente 0.6A, 150V, RDS(ON) 2.6Ω N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
A
L
3
SC-59
3
Top View
C B
1 2 2
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology.
1
K
E D
F
REF. A B C D E F
G
Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50
H
J
Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15
REF. G H J K L
Application
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
1
PACKAGE INFORMATION
Package SC-59 MPQ 3K Leader Size 7’ inch 2
3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA=25°C TA=70°C IDM IS PD Tj, Tstg ID
Ratings
150 ±20 0.6 0.4 10 1.7 1.3 0.8 -55 ~ 150
Unit
V V A A A W W °C
Continuous Source Current (Diode Conduction) Power Dissipation
1
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maxi...
Similar Datasheet