SMG3402

SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-59 A L 3 PACKAGE INFORMATION Weight: 0.07800g K 1 3 Top View 2 C B 1 2 E D Drain MARKING CODE 1 Gate 3 F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 3402 1 2 Source ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Symbol Ratings 30 ±20 4.6 3.7 16 1.38 -55 ~ +150 0.01 Unit V V A A A W ℃ W/℃ VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ Operating Junction and Storage Temperature Range TJ, TSTG Linear Derating Factor THERMAL DATA Parameter 3 Thermal Resistance Junction-ambient Max Symbol RθJ-AMB Value 90 Unit ℃/W 01-December-2008 Rev. A Page 1 of 4 SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drai...