SMS2020

SMS2020 Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free 830mA, 20V N-Channel MOSFET DESCRIPTIONS The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. 1 SOT-23 A 3 3 L Top View 2 C B 1 2 MECHANICAL DATA     K E D Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage F REF. G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 J APPLICATION   DC-DC converter circuit Load Switch A B C D E F DEVICE MARKING: W28  = Date Code PACKAGE INFORMATION Package SOT-23 MPQ 3K Leader Size 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 1 Power Dissipation 1 Continuous Drain Current 2 Power Dissipation 2 Pulsed Drain Current 3 Maximum Junction-to-Lead Operating Junction & Storage Temperature Range TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C Symbol VDS VGS ID PD ID PD IDM RθJL TJ, TSTG Rating 10S 20 ±6 0.9 0.72 0.38 0.24 0.79 0.63 0.29 0.19 1.4 260 150, -55~150 0.83 0.66 0.32 0.2 0.71 0.57 0.24 0.15 Steady State Unit V V A W A W A °C / W °C http://w...