SSE04N65SL

SSE04N65SL Elektronische Bauelemente 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy 1 Symbol VDS VGS TC=25° C TC=100° C ID IDM TC=25° C Derate above 25° C EAS TJ, TSTG PD Rating 650 ±30 4 2.8 16 100 0.8 202 -55~150 Unit V V A A A W mJ ° C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=3.36A, VDD=150V, RG=25Ω, Starting TJ =25° C RθJA RθJC 62.5 1.25 ° C /W ° C /W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 08-Oct-2013 Rev. A...