IGBT
SEMiX223GD12Vc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200...
Description
SEMiX223GD12Vc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 323 246 225 675 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 263 197 225 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 675 1161 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 33c
VGES tpsc Tj IF IFnom
Inverse diode
SEMiX223GD12Vc Features
Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532
Tj = 175 °C
IFRM IFSM Tj Module It(RMS) Tstg Visol
Typical Applications*
AC inverter drives UPS Electronic Welding
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)
Remarks
Case temperature limited to TC=125°C max. Product reliability results are valid for Tj=150°C Dynamic values apply to the following combination of resistors: RGon,main = 2,9 RGoff,main = 2,9 RG,X = 2,2 RE,X = 0,5
Conditions
IC = 225 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 9 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 225 A VGE = ±15 V RG on = 3.8 RG off = 3.8 di/dton = 3200 A/µs di/dtoff = 2000 A/µs du/dtoff = 6600 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °...
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