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SSM0410S

SeCoS Halbleitertechnologie

N-Channel MOSFET

SSM0410S Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pr...


SeCoS Halbleitertechnologie

SSM0410S

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Description
SSM0410S Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM0410S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. K A M SOT-223 4 Top View CB 1 2 3 L E D FEATURES    Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic F G H J MARKING 0410S  REF. A B C D E F  = Date code Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 PACKAGE INFORMATION Package SOT-223 MPQ 2.5K Leader Size 13 inch  G  D  S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V Pulsed Drain Current Power Dissipation 3 2 Symbol VDS VGS TA=25°C TA=70°C ID IDM TA=25°C PD TJ, TSTG Rating 100 ±20 3 1.7 5.5 1.5 -65~150 Unit V V A A A W °C Operating Junction & Storage Temperature Thermal Resistance Rating Thermal Resistance Junction-Ambient (Max). Thermal Resistance Junction-Case (Max). 1 1 RθJA RθJC 85 36 °C / W °C / W http://www.SeCoSGmbH.com/ Any changes of specification w...




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