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SSP7492N

SeCoS Halbleitertechnologie

N-Channel MOSFET

SSP7492N Elektronische Bauelemente 6.2A, 150V, RDS(ON) 88 m N-Channel Enhancement MOSFET RoHS Compliant Product A suff...


SeCoS Halbleitertechnologie

SSP7492N

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Description
SSP7492N Elektronische Bauelemente 6.2A, 150V, RDS(ON) 88 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package SOP-8PP MPQ 3K Leader Size 13 inch REF. A B C D E F G L Millimeter Min. Max. 0.85 1.00 5.3 BSC. 0.15 0.25 3.8 BCS. 6.05 BCS. 0.03 0.30 4.35 BCS. 0.40 0.70 REF. θ b c d e f g Millimeter Min. Max. 0° 10° 5.2 BCS 0.30 0.50 1.27BSC 5.55 BCS. 0.10 0.40 1.2 BCS. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS PD TJ, TSTG Rating 150 ±20 6.2 5 30 6.7 5 3.2 -55~150 Unit V V A A A W °C TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec Ste...




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