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SSRF06N60SL Dataheets PDF



Part Number SSRF06N60SL
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Datasheet SSRF06N60SL DatasheetSSRF06N60SL Datasheet (PDF)

SSRF06N60SL Elektronische Bauelemente 6A , 600V , RDS(ON) 1.5Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF06N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect dec.

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SSRF06N60SL Elektronische Bauelemente 6A , 600V , RDS(ON) 1.5Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF06N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 C G F REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4 2 Drain L REF. A B C D E F G 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy 1 Symbol VDS VGS TC=25° C TC=100° C ID IDM TC=25° C Derate above 25° C EAS TJ, TSTG PD Rating 600 ±30 6 3.8 24 42 0.34 343 -55~150 Unit V V A A A W mJ ° C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=4.4A, VDD=105V, RG=25Ω, Starting TJ =25° C RθJA RθJC 120 2.98 ° C /W ° C /W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Sep-2013 Rev. A Page 1 of 5 SSRF06N60SL Elektronische Bauelemente 6A , 600V , RDS(ON) 1.5Ω N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Total Gate Charge 1.2 1.2 Typ. Max. Unit Teat Conditions BVDSS VGS(th) IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr 600 2 - 1.35 13.32 4.13 4.19 18.53 42.67 33.2 28.13 690.7 83.6 2.7 4 ±100 1 1.5 - V V nA µA Ω VGS=0, ID= 250µA VDS=VGS, ID=250µA VGS= ±30V VDS=600V, VGS=0 VGS=10V, ID=3A ID=6A VDS=480V VGS=10V Gate-Source Charge Gate-Drain Change Turn-on Delay Time Rise Time 1.2 nC 1.2 1.2 Turn-off Delay Time Fall Time 1.2 1.2 nS Td(off) Tf Ciss Coss Crss pF VDD=300V ID=6A RG=25 Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 VDS=25V f =1.0MHz Source-Drain Diode Diode Forward Voltage Continuous Source Current Pulsed Source Current Reverse Recovery Time 1. 1. VSD IS ISM Trr Qrr - 488 3 1.4 6 24 - V A A ns µC IS=6A, VGS=0 Integral Reverse P-N Junction Diode in the MOSFET IS=6A,VGS=0, dlF/dt=100A/µS Reverse Recovery Charge Notes: 1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2% 2. Essentially independent of operating temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Sep-2013 Rev. A Page 2 of 5 SSRF06N60SL Elektronische Bauelemente 6A , 600V , RDS(ON) 1.5Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Sep-2013 Rev. A Page 3 of 5 SSRF06N60SL Elektronische Bauelemente 6A , 600V , RDS(ON) 1.5Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Sep-2013 Rev. A Page 4 of 5 SSRF06N60SL Elektronische Bauelemente 6A , 600V , RDS(ON) 1.5Ω N-Ch Enhancement Mode Power MOSFET TYPICAL TEST CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Sep-2013 Rev. A Page 5 of 5 .


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