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Part Number IXTT48P20P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTT48P20P DatasheetIXTT48P20P Datasheet (PDF)

  IXTT48P20P   IXTT48P20P
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH48P20P IXTT48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 48A 85mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 200 - 200 ±20 ±30 - 48 -144 - 48 2.5 10 462 - 55 ... +150 150 - 55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g G (TAB) D S TO-268 (IXTT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features: z z z z 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220) TO-247 TO-268 300 260 1.13 / 10 11..65 / 2.5..14.6 6 5 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance - easy .



IXTH48P20P IXTT48P20P IXYA20N120C3HV


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