IXYP20N120C3

1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 VCES = IC110 = VCE(sat)  tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO247) Mounting Force (TO-263) TO-263 TO-220 TO-247 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 40 20 96 10 400 ICM = 40 @VCE  VCES 278 -55 ... +175 175 -55 ... +175 300 260 1.13/10 10..65 / 22..14.6 2.5 3.0 6.0 V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in. N/lb g g g G C Tab C = Collector Tab = Collector C (Tab) TO-220 (IXYP) G CE Tab TO-247 AD (IXYH) E G = Gate E = Emitter Features       High Voltage Package Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated International Standard Packages Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE TJ = 150C Characteristic Values Min. Typ. Max. 1200 3.0 5.0 15 500 100 3.4 4.0 V V A μA nA V V  High Power Density Low Gate Drive Requirement Applications      ...