NX5530SA

LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain FEATURES High output power Long wavelength PO = 250 mW @ IFP = 1 000 mA*1 C = 1 550 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10700EJ01V0DS (1st edition) Date Published January 2008 NS NX5530SA PACKAGE DIMENSION (UNIT: mm) 2 Data Sheet PL10700EJ01V0DS NX5530SA ORDERING INFORMATION Part Number NX5530SA-AZ* Package 4-pin CAN with flat glass cap *Note Please refer to the last page of this data sheet “Compliance with EU Directives” for Pb-Free RoHs Compliance Information. ABSOLUTE MAXIMUM RATINGS (T C = 25C, unless otherwise specified) Parameter Pulsed Forward Current Reverse Voltage Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) *1 Symbol IFP VR TC Tstg Tsld RH Ratings 1.2 2.0 20 to +60 40 to +85 350 (3 sec.) 85 Unit A V C C C % *1 Pulse Condition: Pulse Width (PW) = 10 s, Duty = 1% ELECTRO-OPTICAL CHARACTERISTICS (T C = 25C) Parameter Forward Voltage Symbol VFP Conditions IFP = 1 000 mA, PW = 10  s, Duty = 1% Threshold Current Optical Output Power Ith PO C  IFP = 1 000 mA, PW = 10  s, Duty = 1% Center Wavelength RMS (20 dB), IFP = 1 000 ...