SCG4153

SCG4153 Elektronische Bauelemente 0.8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A M 3 SOT-523 3 MECHANICAL DATA 1 Top View 2 C B 1 2 Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage K E L D F G H J APPLICATION DC-DC converter circuit Load Switch REF. A B C D E F MARKING N3 = Date Code Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.35 REF. G H J K L M Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 Top View PACKAGE INFORMATION Package SOT-523 MPQ 3K Leader Size 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Power Dissipation 1 1 Symbol VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM TL TJ, TSTG Rating 10S 20 ±6 0.88 0.71 0.37 0.23 0.76 0.6 0.27 0.17 1.4 260 150, -55~150 0.8 0.64 0.3 0.19 0.69 0.55 0.22 0.14 Steady State Unit V V A W A W A ° C ° C Continuous Drain Current Power Dissipation 2 2 Pulsed Drain Current Lead Temperature 3 Operating Junction & Storage Temperature Range http://www.SeCoSGmbH.com/ Any changes of specification will not be informed...