SDG5521C

SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN2*3 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2*3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E PACKAGE INFORMATION Package DFN2*3 MPQ 3K Leader Size 13’ inch Millimeter Min. Max. 3.00 BSC. 1.70 BSC. 0.70 0.90 0.65 BSC. 0.08 0.25 REF. F G H I Millimeter Min. Max. 0.24 0.35 2.00 BSC. 0.20 0.40 0 0.15 Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Rating N-CH 20 ±8 5 4.1 8 4.5 2.1 1.3 -55 ~ 150 P-CH -20 ±8 -4.7 -3.9 -8 -4.5 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C Operating Junction & Storage Temperature Range Thermal Resistance Rating...