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SSD12P10

SeCoS Halbleitertechnologie

P-Channel MOSFET

SSD12P10 Elektronische Bauelemente -12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A su...


SeCoS Halbleitertechnologie

SSD12P10

File Download Download SSD12P10 Datasheet


Description
SSD12P10 Elektronische Bauelemente -12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. TO-252(D-Pack) FEATURES     A B C D Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant K M J GE HF MARKING 12P10   Date Code Drain N O P REF.  PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13 inch Gate A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58  Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V Pulsed Drain Current 1 Symbol VDS VGS TC=25°C TC=100°C ID IDM TC=25°C PD TJ, TSTG Rating -100 ±20 -12 -10 -48 35.7 -55~150 Unit V V A A A W °C Total Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction- case Maximum Thermal Resistance Junction-ambient RθJC RθJA 3.5 110 °C / W °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be...




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