SSD25N10

SSD25N10 Elektronische Bauelemente 25A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available A B C D GE K HF MARKING 25N10 Date Code 2 Drain N O P M J REF. 1 Gate PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13 inch 3 Source A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V Pulsed Drain Current 2 4 3 1 Symbol VDS VGS TC=25° C TC=70° C ID IDM TC=25° C PD EAS IAS TJ, TSTG Rating 100 ±20 25 16 45 52 26.6 20 -55~150 Unit V V A A A W mJ A ° C Total Power Dissipation Single Pulse Avalanche Energy Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case 1 1 RθJA RθJC 110 2.4 ...