IRFH4251DPbF

IRFH4251DPbF HEXFET® Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 25 4.60 10 45 Q2 25 1.10 44 45 V m nC A       Applications  Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (10nC typical) Low RDSON synchronous MOSFET (<1.10m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL2, Industrial Qualification Base part number   IRFH4251DPbF   Dual PQFN 5mm x 6mm Package Type Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses  Environmentally friendlier Increased reliability Orderable Part Number IRFH4251DTRPbF   Q1 Max. Q2 Max. ± 20   64 188 51 151 45 120 31 20 0.25 45 750 63 40 0.50 W W/°C °C   Q2 Max. 2.0 12 35 22 Units °C/W   Units V A Standard Pack Form Quantity Tape and Reel 4000 Absolute Maximum Ratings VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Thermal Resistance Parameter RJC (Bottom) Junction-to-Case  Junction-to-Case  RJC (Top) Junction-to-Ambient  RJA Junction-to-Ambient  RJA (<10s) Notes  through  are on page 12 1 www.irf.com © 2013 International Rectifier Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Cu...