IRFH4213PbF

FastIRFET™ IRFH4213PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 26 204 nC A PQFN 5X6 mm V m     Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters  Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters  Active ORing and Hot Swap  Battery Operated DC Motor Inverters Features Low RDSon (<1.35m) Low Thermal Resistance to PCB (<1.4°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFH4213PbF   Package Type PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH4213TRPbF Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range Max. ± 20 41     Units V 204 129 400 3.6 89 0.029 -55 to + 150 A W W/°C °C Notes  through  are on ...