IRFH4201PbF

IRFH4201PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 nC A PQFN 5X6 mm V m     Applications  Synchronous Rectifier MOSFET for Sync Buck Converters  Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters  Active ORing and Hot Swap  Battery Operated DC Motor Inverters Features Low RDSon (<0.95 m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFH4201PbF   Package Type PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH4201TRPbF Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. ± 20 49     Units V A 3...