IGBT
SEMiX854GB176HDs
SEMiX® 4s
Trench IGBT Modules
SEMiX854GB176HDs
Features
• Homogeneous Si • Trench = Trenchgate technol...
Description
SEMiX854GB176HDs
SEMiX® 4s
Trench IGBT Modules
SEMiX854GB176HDs
Features
Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature
coefficient UL recognised file no. E63532
Typical Applications*
AC inverter drives UPS Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 600 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 24 mA
VGE = 0 V VCE = 1700 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V IC = 600 A VGE = ±15 V RG on = 2 RG off = 2
Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1700 779 549 600 1200 -20 ... 20
10
-55 ... 150
740 496 600 1200 3800 -40 ... 150
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max. Unit
2
2.45
V
2.5
2.9
V
1
1.2
V
0.9
1.1
V
1.7
2.1
m
2.6
3.0
m
5.2
5.8...
Similar Datasheet
- SEMiX854GB176HD IGBT - Semikron International
- SEMiX854GB176HDs IGBT - Semikron International