SGP30N60

SGP30N60 SGW30N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 PG-TO-247-3 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP30N60 SGW30N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 30 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C Ptot 250 W tSC 10 µs VGE EAS ±20 165 V mJ ICpuls Symbol VCE IC 41 30 112 112 Value 600 Unit V A VCE 600V 600V IC 30A 30A VCE(sat) 2.5V 2.5V Tj 150°C 150°C Marking G30N60 G30N60 Package PG-TO-220-3-1 PG-TO-247-3 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Nov. 09 SGP30N60 SGW30...