SGP30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution G E PG-TO-220-3-1 PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 30 30 Eoff) 480µJ 480µJ Tj Marking Package PG-TO-220-3-1 PG-TO-247-3 Type SGP30N60HS SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C 150°C G30N60HS 150°C G30N60HS Symbol VCE IC Value 600 41 30 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s ICpuls EAS 112 112 165 mJ VGE tSC Ptot Tj , Tstg Tj(tl) - ±20 ±30 10 250 -55...+150 175 260 V µs W °C 1 2) J-STD-020 and JESD-022 Allowed nu...