SGP30N60

Preliminary data SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology 75 % lower Eoff compared to previous generation Short circuit withstand time 10 µs Designed for moderate and high frequency applications: - SMPS and PFC up to 150 kHz - Inverter, Motor controls NPT-Technology for 600V applications offers: - tighter parameter distribution - higher ruggedness, temperature stable behaviour - parallel switching capability combined with low conduction losses Type SGP30N60 SGB30N60 SGW30N60 VCE 600 V IC 30 A VCE(sat) 2.5 V Tj Package TO-263AB TO-247AC Ordering Code Q67041-A4713-A2 Q67041-A4713-A3 Q67040-S4237 150 °C TO-220AB Maximum Ratings Parameter Collector-emitter voltage DC collector current Symbol Value 600 41 30 Unit V A VCE IC T C = 25 °C T C = 100 °C Pulsed collector current, tp limited by T jmax Gate-emitter voltage Avalanche energy, single pulse ICpuls VGE EAS 112 ±20 165 V mJ I C = 30 A, VCC = 50 V, R GE = 25 Ω, start at T j = 25 °C Short circuit withstand time Power dissipation 1) tsc Ptot Tj , Tstg 10 250 -55...+150 260 µs W °C VGE = 15 V, VCC = 600 V, T j ≤ 150 °C T C = 25 °C Operating junction and storage temperature Soldering temperature, 1.6mm from case for 10s - 1) allowed number of short circuits: <1000; time between short circuits: >1s Semiconductor Group 1 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Thermal Resistance Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - a...