Document
SKM 400GB128D...
Absolute Maximum Ratings Symbol Conditions IGBT
% %56 7 9" 1 3 )- 12*3 . / :5&%:; < &" /
= )- 12*3 . / /* B
=B 9 /-* . )- 12*3 . / /* B
B 9 /-* .
)- ."
' Values
/)** -#- 14**3 #** 8 )* 4* === > /-* 1/)-3 4*** @A* 1)#*3 #** )A** @A* 1)#*3 #** )A**
Units
& & . & & & & & &
SEMITRANSTM 3 SPT IGBT Module
SKM 400GB128D SKM 400GAL128D SKM 400GAR128D
Inverse diode
%? %?56 %? 6 %? %?56 %? 6
Freewheeling diode
Characteristics Symbol Conditions IGBT
713 % 1:3 1 3 D 5E>E '1
3 '13
13 7 " % /) & 7 *" " 9 )- 13 . 9 )- 13 . 7 /- " 9 )- 1/)-3 . %
@** &" 7 /- "
'
'
7 *" )- " / 6,
)- ."
' min.
4"-
typ.
-"*") / 1*"A3 @ 143 /"A 1)"/3 )# @ @
max.
#"4*"# /"/- 1/"*-3 4 1-3 )"@- 1)"--3
Units
& C
?
?
?
C
G
Features
!"
# $ %
)* ="
)- 1/)-3 . #** " %
@** & 57
57 4"F C" 9 /)- . 7 8 /- *"@- 1*"-3 //* #* 2** #* @) 1@/3 %?
@** &B 7 * B 9 )- 1/)-3 . 9 )- 1/)-3 . 9 )- 1/)-3 . %?
@** &B 9 /)- 1 3 . 'I' )4** &IJ 7 * %? @** &B 7 * " 9 )- 1/)-3 . 9 )- 1/)-3 . 9 )- 1/)-3 . %? @** &B 9 /)- 1 3 . 'I' * &IJ 7 * %7K %
N' '
+ 6#
6# @ )") 1/"23 /"/ @ /F# 4* /# ) 1/"23 /"/ @ /F# 4* /# *"*-*"/)*"*@2 @))"/") 4"@ )"/") 4"@
Typical Applications &
' (
'
)*+,
Inverse diode
? 1:3 %556 H C & J G C & J G LIM LIM LIM ; ;
FWD
? 1:3 %556 H 5193 5193N 51 3 6 6
Thermal characteristics
Mechanical data
GB
GAL
GAR
1
19-09-2005 RAA
© by SEMIKRON
SKM 400GB128D...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
19-09-2005 RAA
© by SEMIKRON
SKM 400GB128D...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
19-09-2005 RAA
© by SEMIKRON
SKM 400GB128D...
Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm
7K
N -#
7&D
N -F
7&5
N -2
N -#
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
4
19-09-2005 RAA
© by SEMIKRON
.