SKM200GAR12E4

SKM200GAR12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 IGBT4 Modules SKM200GAR12E4 Features IGBT4 = 4. generation medium fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 12kHz UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Inverse diode Tj = 175 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications* DC/DC – converter Brake chopper Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint Conditions IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 120...