IGBT
SKM300GBD12T4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 ...
Description
SKM300GBD12T4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 422 324 300 900 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 56 43 50 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 150 180 -40 ... 175 Tc = 25 °C Tc = 80 °C 440 329 400 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1980 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V
Conditions
Values
Unit
SEMITRANS® 3
Fast IGBT4 Modules
SKM300GBD12T4 Features
IGBT4 = 4. generation fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532
VGES tpsc Tj IF IFnom IFRM IFSM Tj
Inverse diode Tj = 175 °C
Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C
Typical Applications*
Current source inverter
Remarks
The Fig.1 to Fig.9 are based on measurements of the SKM300GB12T4 The series diodes (FWD) have the data of the inverse diodes of SKM400GB12T4 Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint
Cond...
Similar Datasheet
- SKM300GBD12T4 IGBT - Semikron International