IRG7PK35UD1PbF

  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A G   C C C   G E C E G C E Applications  Induction heating  Microwave ovens  Soft switching applications n-channel IRG7PK35UD1PbF  TO‐247AC  G Gate IRG7PK35UD1‐EPbF  TO‐247AD  E Emitter C Collector Features Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant Benefits High efficiency in a wide range of soft switching applications and switching frequencies Excellent current sharing in parallel operation Environmentally friendly Base part number IRG7PK35UD1PbF IRG7PK35UD1-EPbF Absolute Maximum Ratings Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG7PK35UD1PbF IRG7PK35UD1-EPbF Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V  Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mountin...