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IRG7PK35UD1PbF IRG7PK35UD1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A
G
C
C
C
G
E
C
E G
C
E
Applications Induction heating Microwave ovens Soft switching applications
n-channel
IRG7PK35UD1PbF TO‐247AC G Gate
IRG7PK35UD1‐EPbF TO‐247AD E Emitter
C Collector
Features
Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of soft switching applications and switching frequencies Excellent current sharing in parallel operation Environmentally friendly
Base part number IRG7PK35UD1PbF IRG7PK35UD1-EPbF Absolute Maximum Ratings
Package Type TO-247AC TO-247AD
Standard Pack Form Quantity Tube 25 Tube 25
Orderable Part Number IRG7PK35UD1PbF IRG7PK35UD1-EPbF
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max. 1400 40 20 200 80 40 20 ±30 167 67 -40 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.75 1.4 ––– –––
Units V A
V W
C
Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case (IGBT) Thermal Resistance Junction-to-Case (Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) © 2014 International Rectifier Units °C/W
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February 27, 2014
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. — 2.0 Collector-to-Emitter Saturation Voltage VCE(on) — 2.4 VGE(th) Gate Threshold Voltage 3.0 — gfe Forward Transconductance — 21 — 1.0 ICES Collector-to-Emitter Leakage Current — 150 — — IGES Gate-to-Emitter Leakage Current — 1.30 Diode Forward Voltage Drop VF — 1.25 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eoff td(off) tf Eoff td(off) tf Cies Coes Cres RBSOA Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-Off Switching Loss Turn-Off delay time Fall time Turn-Off Switching Loss Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. — — — — — — — — — — — — Typ. 65 15 25
Max. Units 2.35 .