SKiM606GD066HD

SKiM606GD066HD SKiM® 63 Trench IGBT Modules SKiM606GD066HD Features IGBT 3 Trench Gate Technology Solderless sinter technology VCE(sat) with positive temperature coefficient Low inductance case Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate Pressure contact technology for thermal contacts Spring contact system to attach driver PCB to the control terminals High short circuit capability, self limiting to 6 x IC Integrated temperature sensor Typical Applications* Automotive inverter High reliability AC inverter wind High reliability AC inverter drives Remarks Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) Recommended Top = -40 … +150°C GD Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj ICRM = 2 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Inverse - Diode IF λpaste=0.8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IF λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IFnom IFRM IFRM = 2 x IFnom IFSM 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) Tterminal = 80 °C, Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150...