SKiM609GAL12E4

SKiM609GAL12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 1200 748 608 600 1800 -20 ... 20 10 -40 ... 175 139 110 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 900 -40 ... 175 Ts = 25 °C Ts = 70 °C 1397 1107 1350 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 4050 6480 -40 ... 175 700 -40 ... 125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SKiM® 93 Trench IGBT Modules SKiM609GAL12E4 Target Data Features IGBT 4 Trench Gate Technology Solderless sinter technology VCE(sat) with positive temperature coefficient Low inductance case Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate Pressure contact technology forthermal contacts and electricalcontacts High short circuit capability, self limiting to 6 x IC Integrated temperature sensor Tj = 175 °C IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications Automotive inverter High reliability AC inverter wind High reliability AC inverter drives Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C f = 1 MHz f = 1 MHz f = 1 MHz 1.85 2.25 0.8 0.7 1.8 2....