N And P-Channel Enhancement Mode Power MOSFET
SSDF9510
Elektronische Bauelemente
13A, 100V, RDS(ON) 110mΩ -13A, -100V, RDS(ON) 210mΩ N And P-Channel Enhancement Mode ...
Description
SSDF9510
Elektronische Bauelemente
13A, 100V, RDS(ON) 110mΩ -13A, -100V, RDS(ON) 210mΩ N And P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSDF9510 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The SSDF9510 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
TO-252-4L
FEATURES
Low Gate Charge Low On-resistance
MARKING CODE
9510 = Date Code
PACKAGE INFORMATION
REF.
Package TO-252-4L
MPQ 2.5K
Leader Size 13 inch
A B C D E
Millimeter Min. Max. 6.4 6.8 9.4 10.2 5.4 5.8 2.4 3.0 1.27 REF.
REF. F G H I J
Millimeter Min. Max. 0.4 0.6 2.2 2.4 0.45 0.55 1.4 1.8 0.8 1.2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Ratings Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 @ VGS=10V Pulsed Drain Current
2 3
Symbol
N-Channel P-Channel
Unit
100 ±20 13 -100 ±20 -13 A 10.5 -10 -48 50 -10 35.7 62.5 3.5 -55~150 A mJ A W ° C/W ° C/W ° C 48 50 10 V V
VDS VGS TC =25° C ID TC =100° C IDM EAS IAS PD
1
Single Pulse Avalanche Energy Avalanche Current Power Dissipation
4
Maximum Junction to Ambient Maximum Junction to Case
1
RθJA RθJC TJ, TSTG
Operating Junction & Storage Temperature Range
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
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SSDF9510
Elektronische Bauelemente
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