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SSDF9510

SeCoS Halbleitertechnologie

N And P-Channel Enhancement Mode Power MOSFET

SSDF9510 Elektronische Bauelemente 13A, 100V, RDS(ON) 110mΩ -13A, -100V, RDS(ON) 210mΩ N And P-Channel Enhancement Mode ...


SeCoS Halbleitertechnologie

SSDF9510

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Description
SSDF9510 Elektronische Bauelemente 13A, 100V, RDS(ON) 110mΩ -13A, -100V, RDS(ON) 210mΩ N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSDF9510 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The SSDF9510 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. TO-252-4L FEATURES Low Gate Charge Low On-resistance MARKING CODE 9510 = Date Code PACKAGE INFORMATION REF. Package TO-252-4L MPQ 2.5K Leader Size 13 inch A B C D E Millimeter Min. Max. 6.4 6.8 9.4 10.2 5.4 5.8 2.4 3.0 1.27 REF. REF. F G H I J Millimeter Min. Max. 0.4 0.6 2.2 2.4 0.45 0.55 1.4 1.8 0.8 1.2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 @ VGS=10V Pulsed Drain Current 2 3 Symbol N-Channel P-Channel Unit 100 ±20 13 -100 ±20 -13 A 10.5 -10 -48 50 -10 35.7 62.5 3.5 -55~150 A mJ A W ° C/W ° C/W ° C 48 50 10 V V VDS VGS TC =25° C ID TC =100° C IDM EAS IAS PD 1 Single Pulse Avalanche Energy Avalanche Current Power Dissipation 4 Maximum Junction to Ambient Maximum Junction to Case 1 RθJA RθJC TJ, TSTG Operating Junction & Storage Temperature Range http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Nov-2012 Rev. A Page 1 of 7 SSDF9510 Elektronische Bauelemente ...




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