SSE4N60

SSE4N60 Elektronische Bauelemente 4.1A, 600 V, RDS(ON) 2.5 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. A TO-220Y E J B K C D L G FEATURES Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Millimeter Min. Max. 10.6 1.58 1.82 1.20 1.45 14.22 16.50 3.50 4.00 2.70 3.30 1.20 1.78 0.50 1.00 REF. I J K L M N Q Millimeter Min. Max. 12.70 14.70 3.60 4.80 1.14 1.40 5.84 6.86 2.03 2.90 0.35 0.64 2.34 2.74 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 2 Symbol VDS VGS ID IDM PD Ratings 600 ±30 4.1 16.4 98 0.78 Unit V V A A W W/° C mJ mJ ° C Derating factor above 25° C Single Pulsed Avalanche Energy Repetitive Avalanche Ene...