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SSG4407PE

SeCoS Halbleitertechnologie

P-Channel Mode Power MOSFET

SSG4407PE Elektronische Bauelemente -15 A, -30 V, RDS(ON) 9 mΩ P-Channel Mode Power MOSFET RoHS Compliant Product A suf...


SeCoS Halbleitertechnologie

SSG4407PE

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Description
SSG4407PE Elektronische Bauelemente -15 A, -30 V, RDS(ON) 9 mΩ P-Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F E REF. A B C D E F G REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION S D D D D Package SOP-8 MPQ 2.5K Leader Size 13’ inch ESD Protection Diode S S G MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Ratings -30 Unit V V A A A A W W ° C ±20 -15 -11 ±50 -2.1 3.1 2.3 -55 ~ 150 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C Operating Junction & Storage Temperature Range ...




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