Document
SK 60 GAL 123
Absolute Maximum Ratings Symbol Conditions IGBT
&1) &41) * *: $= $ , -. 63 /7 ; 2 7 $ , -. 63 /7
$ , -. /0
Values
2-33 5 -3 .6 83 22< 63 % 83 >>> ? 2.3
Units
& & 9 9 / 9 9 / / / &
Freewheeling CAL diode
SEMITOP 2 IGBT Module
SK 60 GAR 123 SK 60 GAL 123 Preliminary Data
®
*@ *@: , % *: $= $ $ &
$ , -. 63 /7 ; 2 7 $ , -. 63 /7
.A B6 238 B6 % 83 >>> ? 2.3 % 83 >>> ? 2-. -<3 -.33 D B333
$ 0 23 9 .3 C0 >>> 2 > D 2
Characteristics Symbol Conditions IGBT
&1 &41 E=% * , .3 90 $= , -. 2-. / &1 , &417 * , 3033- 9 &1 , -. &7 &41 , 3 &7 2 :C *4$ 1 ? 1 &@ , &1 &$ $ E=% *EE: L 1 :2 )1:*$#O
H *@ , .3 97 &E , <33 & *@D , %633 9DM &41 , 3 &7 $= , 2-. / N
H & , <33 & 0 &41 , 5 2. & * , .3 90 $= , 2-. / E4 , E4 , -- J *
' *@ , .3 97 $= , -. 2-. / $= , 2-. / $= , 2-. /
$ , -. /0
min.
80.
typ.
-0. B02 .0. B0B
max.
B B0A <0. 30<
Units
& & @ FDG FDG
Features
! "#$ "%#
%$
! &
'
(
A3 I3 8<3 B3 2< - 206 2 26 -0. 20-30I 83 6 -0B 2I $ 26
K & & J FDG 9 M K "
Freewheeling CAL diode
Typical Applications )
*' )
+#)
Mechanical data
GAL
GAR
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20-10-2005 RAM
© by SEMIKRON
SK 60 GAL 123
Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
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20-10-2005 RAM
© by SEMIKRON
SK 60 GAL 123
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
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20-10-2005 RAM
© by SEMIKRON
SK 60 GAL 123
UL Recognized File no. E 63532 Dimensions in mm
$26
49(
$26
49E
)+441)$1 (1*9:1$1E @E $1 )(1E #*") 9" $1 :+"$*"4 #*") *" $1 #H -
$26
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
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20-10-2005 RAM
© by SEMIKRON
.