Document
SK 60 GAL 128
Absolute Maximum Ratings Symbol Conditions IGBT
'/" '2/" ) ): $= $ % +, 41 -5 ; 0 5 $ % +, 41 -5
$ % +, -.
Values
0+11 3 +1 67 88 071 <1 & 81 >>> ? 0,1
Units
' ' 9 9 - 9 9 - - - '
Freewheeling CAL diode
SEMITOP 2 IGBT Module
SK 60 GAR 128 SK 60 GAL 128 Target Data
®
)@ )@: % & ): $= $ $ '
$ % +, 41 -5 ; 0 5 $ % +, 41 -5
,A 74 008 74 & 81 >>> ? 0,1 & 81 >>> ? 0+, +61 +,11 C 7111
$ . 01 9 ,1 B. >>> 0 > C 0
Characteristics Symbol Conditions IGBT
'/ '2/ D=& ) % 81 9. $= % +, 0+, - '/ % '2/5 ) % 1.11+ 9 '/ % +, '5 '2/ % 1 '5 0 :B )2$ / ? / '@ % '/ '$ $ D=& )DD: J / :0 "/:)$#N 7
G )@ % ,1 95 'D % 611 ' )@C % &411 9CK '2/ % 1 '5 $= % 0+, - L
G ' % 611 ' . '2/ % 3 0, ' ) % ,1 9. $= % 0+, - D2 % D2 % 0, H )
( )@ % ,1 95 $= % +, 0+, - $= % 0+, - $= % 0+, -
$ % +, -.
min.
8.,
typ.
0.4 0.<8 ,., 8.,
max.
6., 1.6
Units
' ' @ ECF ECF
Features
Typical Applications "
)( "
*#"
! "#$%"
&$
! '
(
41 ,1 8+1 81 01.8 + 0.4 0 06
I ' ' H ECF 9 K I + M
Freewheeling CAL diode
0.+ ++ 1.< 81 4 +
Mechanical data
0< $ 04
GAL
GAR
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20-10-2005 RAM
© by SEMIKRON
SK 60 GAL 128
Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
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20-10-2005 RAM
© by SEMIKRON
SK 60 GAL 128
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Typ. CAL Diode peak reverse recovery current
Fig. 14 Typ. Cal Diode forward characteristic
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20-10-2005 RAM
© by SEMIKRON
SK 60 GAL 128
UL Recognized File no. E 63532 Dimensions in mm
$04
29O
$04
29D
"*22/"$/ O/)9:/$/D @D $/ "O/D #)M" 9M $/ :*M$)M2 #)M" )M $/ #G +
$04
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
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20-10-2005 RAM
© by SEMIKRON
.