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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1670
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A
APPLICATIONS ·For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃
w w
s c s i . w
VALUE 150 100 8 ±10 ±20 1 3.5
UNIT V
n c . i m e
V
V A A A
PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature Storage Temperature 65 150 -55~150
W
℃ ℃
isc Website:www.iscsemi.cn
www.DataSheet4U.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1670
TYP.
MAX
UNIT
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
IC= 10A; IB= 25mA
1.5
V
Base-Emitter Saturation Voltage
IC= 10A; IB= 25mA
2.0
V μA
Collector Cutoff Current
VCB= 100V ; IE= 0
10
IEBO hFE
Emitter Cutoff Current
VEB= 5V; IC= 0 IC= 10A; VCE= 2V 1000
3.0
mA
DC Current Gain
30000
Switching Times ton tstg tf Turn-on Time
Storage Time
Fall Time
hFE-1 Classifications M L
w
ww
K 4000-10000
s c s .i
J 8000-30000
VCC≈ 50V, RL= 5Ω, IC= 10A; IB1= -IB2= 25mA,
n c . i m e
1.0
μs μs μs
5.0
2.0
1000-3000
2000-5000
isc Website:www.iscsemi.cn
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