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D1670 Dataheets PDF



Part Number D1670
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description 2SD1670
Datasheet D1670 DatasheetD1670 Datasheet (PDF)

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS ·For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Volt.

  D1670   D1670


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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS ·For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ w w s c s i . w VALUE 150 100 8 ±10 ±20 1 3.5 UNIT V n c . i m e V V A A A PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature Storage Temperature 65 150 -55~150 W ℃ ℃ isc Website:www.iscsemi.cn www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1670 TYP. MAX UNIT VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V μA Collector Cutoff Current VCB= 100V ; IE= 0 10 IEBO hFE Emitter Cutoff Current VEB= 5V; IC= 0 IC= 10A; VCE= 2V 1000 3.0 mA DC Current Gain 30000 Switching Times ton tstg tf Turn-on Time Storage Time Fall Time ‹ hFE-1 Classifications M L w ww K 4000-10000 s c s .i J 8000-30000 VCC≈ 50V, RL= 5Ω, IC= 10A; IB1= -IB2= 25mA, n c . i m e 1.0 μs μs μs 5.0 2.0 1000-3000 2000-5000 isc Website:www.iscsemi.cn 2 .


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