D1576

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector- Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww s c s .i 1500 V 1500 V 700 V 6 V 2 A 6 A 2.5 A n c . i m e ICM Collector Current-Peak IBM Base Current-Peak Collector Power Dissipation @ Ta=25℃ 2.5 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1576 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 2A; VCE= 5V 6 50 1.0 2 V μA mA ICBO Collector Cutoff Current hFE DC Current Gain fT Current-Gain—Bandwidth Product Switching times tstg Storage Time tf Fall Time w w w m e ...